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VGF InP (100) Zn doped, 2" x 0.35mm, wafer, 1sp
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VGF InP (100) Zn doped, 2" x 0.35mm, wafer, 1sp

VGF InP (100) Zn doped, 2" x 0.35mm, wafer, 1sp

InP single crystal wafer
Growing Method:    VGF
Orientation:            (100)
Size:                       2" diameter x 0.35 mm
Doping:                   Zn doped
Conducting type:     S-C
Polish:                     one side polished
Resistivity:              (5.61-6.84)E-2 ohm.cm
Mobility:                  81-85 cmE2/V.S
EPD:                       < 5000 /cmE2
Carrier Concerntration:   (1.09-1.37) E18 /cm^3
Ra(Average Roughness) :   < 0.4 nm

EPI ready surface and packing



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$475.65

Original: $1,359.00

-65%
VGF InP (100) Zn doped, 2" x 0.35mm, wafer, 1sp—

$1,359.00

$475.65

VGF InP (100) Zn doped, 2" x 0.35mm, wafer, 1sp

InP single crystal wafer
Growing Method:    VGF
Orientation:            (100)
Size:                       2" diameter x 0.35 mm
Doping:                   Zn doped
Conducting type:     S-C
Polish:                     one side polished
Resistivity:              (5.61-6.84)E-2 ohm.cm
Mobility:                  81-85 cmE2/V.S
EPD:                       < 5000 /cmE2
Carrier Concerntration:   (1.09-1.37) E18 /cm^3
Ra(Average Roughness) :   < 0.4 nm

EPI ready surface and packing



Related Products

Other GaAs


 InSb

 Other InAs

 		 InP 


 GaSb

 Wafer Box

 Film Coater

 RTP Furnaces

 

Product Information

Shipping & Returns

Description

InP single crystal wafer
Growing Method:    VGF
Orientation:            (100)
Size:                       2" diameter x 0.35 mm
Doping:                   Zn doped
Conducting type:     S-C
Polish:                     one side polished
Resistivity:              (5.61-6.84)E-2 ohm.cm
Mobility:                  81-85 cmE2/V.S
EPD:                       < 5000 /cmE2
Carrier Concerntration:   (1.09-1.37) E18 /cm^3
Ra(Average Roughness) :   < 0.4 nm

EPI ready surface and packing



Related Products

Other GaAs


 InSb

 Other InAs

 		 InP 


 GaSb

 Wafer Box

 Film Coater

 RTP Furnaces

 

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