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VGF InP (100) undoped,10x10x 0.35 mm wafer, 1sp
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VGF InP (100) undoped,10x10x 0.35 mm wafer, 1sp

VGF InP (100) undoped,10x10x 0.35 mm wafer, 1sp

InP single crystal wafer

Orientation:                  (100)
Size:                            10x10 x 0.35 mm
Doping:                        Un- doped
Conducting type:           N
Polish:                          One side  polished
Mobility:                       3500-4500cm^2/V.S
EPD:                            <6000 /cm^2
Carrier Concerntration:  3x10 ^16 /cmE-3

 

Typical Properties

Dopant

Type

Carrier Concentration

( cm-3)

Mobility

( cm2/V.Sec)

Resistivity

( ohm-cm )

EPD

(cm-2)

Undoped

N

7.5-9.5  x1015

4300-4400

1.6E-1-4.5E-1

<5000

Sn

N

0.5 ~1.0 x1018

0.5 ~1.0 x1018

200 ~ 2400

1500 ~ 2000

0.001 ~ 0.002

0.0025~0.007

3~5 x104

Zn

P

0.8 ~ 2.0  x1018

2.5 ~ 4.0 x1018

2500 ~ 3500

1300 ~ 1600

0.0025 ~ 0.006

1~ 3 x104

Fe

Semi-Insulating

N/A

1550-1640

(2.1-2.7) x107

<5000



Related Products

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 GaSb

 Wafer Box

 Film Coater

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$219.00
VGF InP (100) undoped,10x10x 0.35 mm wafer, 1sp—
$219.00

VGF InP (100) undoped,10x10x 0.35 mm wafer, 1sp

InP single crystal wafer

Orientation:                  (100)
Size:                            10x10 x 0.35 mm
Doping:                        Un- doped
Conducting type:           N
Polish:                          One side  polished
Mobility:                       3500-4500cm^2/V.S
EPD:                            <6000 /cm^2
Carrier Concerntration:  3x10 ^16 /cmE-3

 

Typical Properties

Dopant

Type

Carrier Concentration

( cm-3)

Mobility

( cm2/V.Sec)

Resistivity

( ohm-cm )

EPD

(cm-2)

Undoped

N

7.5-9.5  x1015

4300-4400

1.6E-1-4.5E-1

<5000

Sn

N

0.5 ~1.0 x1018

0.5 ~1.0 x1018

200 ~ 2400

1500 ~ 2000

0.001 ~ 0.002

0.0025~0.007

3~5 x104

Zn

P

0.8 ~ 2.0  x1018

2.5 ~ 4.0 x1018

2500 ~ 3500

1300 ~ 1600

0.0025 ~ 0.006

1~ 3 x104

Fe

Semi-Insulating

N/A

1550-1640

(2.1-2.7) x107

<5000



Related Products

Other GaAs


 InSb

 Other InAs

 		 InP 


 GaSb

 Wafer Box

 Film Coater

 RTP Furnaces
 

Product Information

Shipping & Returns

Description

InP single crystal wafer

Orientation:                  (100)
Size:                            10x10 x 0.35 mm
Doping:                        Un- doped
Conducting type:           N
Polish:                          One side  polished
Mobility:                       3500-4500cm^2/V.S
EPD:                            <6000 /cm^2
Carrier Concerntration:  3x10 ^16 /cmE-3

 

Typical Properties

Dopant

Type

Carrier Concentration

( cm-3)

Mobility

( cm2/V.Sec)

Resistivity

( ohm-cm )

EPD

(cm-2)

Undoped

N

7.5-9.5  x1015

4300-4400

1.6E-1-4.5E-1

<5000

Sn

N

0.5 ~1.0 x1018

0.5 ~1.0 x1018

200 ~ 2400

1500 ~ 2000

0.001 ~ 0.002

0.0025~0.007

3~5 x104

Zn

P

0.8 ~ 2.0  x1018

2.5 ~ 4.0 x1018

2500 ~ 3500

1300 ~ 1600

0.0025 ~ 0.006

1~ 3 x104

Fe

Semi-Insulating

N/A

1550-1640

(2.1-2.7) x107

<5000



Related Products

Other GaAs


 InSb

 Other InAs

 		 InP 


 GaSb

 Wafer Box

 Film Coater

 RTP Furnaces
 

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