
VGF InP (100) undoped, 2" x 0.35 mm wafer, 2sp - IPUa50D035C2US
InP single crystal wafer
Orientation: (100)
Size: 2" diameter x 0.35 mm
Doping: Un- doped
Conducting type: S-C
Polish: Two sides polished
Resistivity: (2.48-3.34)10^-1 ohm.cm
Mobility: 4250-4340cm^2/V.S
EPD: <5000 /cm^2
Carrier Concerntration: (4.34-5.91) ^15 /cmE-3
EPI ready surface and packing
Original: $1,399.00
-65%$1,399.00
$489.65VGF InP (100) undoped, 2" x 0.35 mm wafer, 2sp - IPUa50D035C2US
InP single crystal wafer
Orientation: (100)
Size: 2" diameter x 0.35 mm
Doping: Un- doped
Conducting type: S-C
Polish: Two sides polished
Resistivity: (2.48-3.34)10^-1 ohm.cm
Mobility: 4250-4340cm^2/V.S
EPD: <5000 /cm^2
Carrier Concerntration: (4.34-5.91) ^15 /cmE-3
EPI ready surface and packing
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
InP single crystal wafer
Orientation: (100)
Size: 2" diameter x 0.35 mm
Doping: Un- doped
Conducting type: S-C
Polish: Two sides polished
Resistivity: (2.48-3.34)10^-1 ohm.cm
Mobility: 4250-4340cm^2/V.S
EPD: <5000 /cm^2
Carrier Concerntration: (4.34-5.91) ^15 /cmE-3
EPI ready surface and packing










