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InP-VGF Grown (111)B Fe doped, 2"x0.35 mm wafer, 1sp, Semi-insulating
- InP single crystal wafer
- Orientation: (111)B
- Size: 2" diameter x 0.35mm
- Doping: Fe doped
- Conducting type: Semi-Insulating
- Resistivity:(1.42-1.56)E7 ohm.cm
- Mobility:1790-1980 cm^2/v.s
- Polish: one side polished
- Ra(Average Roughness) : < 0.4 nm
- EPI ready surface and packing
$488.25
Original: $1,395.00
-65%InP-VGF Grown (111)B Fe doped, 2"x0.35 mm wafer, 1sp, Semi-insulating—
$1,395.00
$488.25InP-VGF Grown (111)B Fe doped, 2"x0.35 mm wafer, 1sp, Semi-insulating
- InP single crystal wafer
- Orientation: (111)B
- Size: 2" diameter x 0.35mm
- Doping: Fe doped
- Conducting type: Semi-Insulating
- Resistivity:(1.42-1.56)E7 ohm.cm
- Mobility:1790-1980 cm^2/v.s
- Polish: one side polished
- Ra(Average Roughness) : < 0.4 nm
- EPI ready surface and packing
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
- InP single crystal wafer
- Orientation: (111)B
- Size: 2" diameter x 0.35mm
- Doping: Fe doped
- Conducting type: Semi-Insulating
- Resistivity:(1.42-1.56)E7 ohm.cm
- Mobility:1790-1980 cm^2/v.s
- Polish: one side polished
- Ra(Average Roughness) : < 0.4 nm
- EPI ready surface and packing
