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InP-VGF Grown (111)B undoped, 2"x0.35 mm wafer, 1sp
- InP single crystal wafer
- Orientation: (111)B
- Size: 2" diameter x 0.35mm
- Doping: undoped
- Conducting type: N Type, Semi-Conducting
- Resistivity: (2-5)E-1 ohm.cm
- Carrier Concentration:(4.80-5.87)E15 /c.c.
- Mobility:4030-4570cm^2/v.s
- Polish: one side polished
- Ra(Average Roughness) : < 0.4 nm
- EPD: N/A
- EPI ready surface and packing
$475.65
Original: $1,359.00
-65%InP-VGF Grown (111)B undoped, 2"x0.35 mm wafer, 1sp—
$1,359.00
$475.65InP-VGF Grown (111)B undoped, 2"x0.35 mm wafer, 1sp
- InP single crystal wafer
- Orientation: (111)B
- Size: 2" diameter x 0.35mm
- Doping: undoped
- Conducting type: N Type, Semi-Conducting
- Resistivity: (2-5)E-1 ohm.cm
- Carrier Concentration:(4.80-5.87)E15 /c.c.
- Mobility:4030-4570cm^2/v.s
- Polish: one side polished
- Ra(Average Roughness) : < 0.4 nm
- EPD: N/A
- EPI ready surface and packing
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
- InP single crystal wafer
- Orientation: (111)B
- Size: 2" diameter x 0.35mm
- Doping: undoped
- Conducting type: N Type, Semi-Conducting
- Resistivity: (2-5)E-1 ohm.cm
- Carrier Concentration:(4.80-5.87)E15 /c.c.
- Mobility:4030-4570cm^2/v.s
- Polish: one side polished
- Ra(Average Roughness) : < 0.4 nm
- EPD: N/A
- EPI ready surface and packing
