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InP - (VGF-Grown), (111)A, S doped, 2" x 0.5mm wafer, 1sp - IPScA50D05C1US
- InP single crystal wafer
- Growing Method: VGF
- Orientation: (111)A
- Size: 2" diameter x 0.5 mm
- Doping: S- doped
- Conducting type: S-C-N
- Polish: one side polished
- Resistivity: (0.87-1.19)x10^-3 ohm.cm
- Mobility: 1400-1670 cmE2/V.S
- EPD: N/A
- Carrier Concentration: (3.15-5.15) x10^18 /cm^3
- Surface Roughness: <4 nm
- EPI ready surface and packing
$488.25
Original: $1,395.00
-65%InP - (VGF-Grown), (111)A, S doped, 2" x 0.5mm wafer, 1sp - IPScA50D05C1US—
$1,395.00
$488.25InP - (VGF-Grown), (111)A, S doped, 2" x 0.5mm wafer, 1sp - IPScA50D05C1US
- InP single crystal wafer
- Growing Method: VGF
- Orientation: (111)A
- Size: 2" diameter x 0.5 mm
- Doping: S- doped
- Conducting type: S-C-N
- Polish: one side polished
- Resistivity: (0.87-1.19)x10^-3 ohm.cm
- Mobility: 1400-1670 cmE2/V.S
- EPD: N/A
- Carrier Concentration: (3.15-5.15) x10^18 /cm^3
- Surface Roughness: <4 nm
- EPI ready surface and packing
Product Information
Product Information
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Shipping & Returns
Description
- InP single crystal wafer
- Growing Method: VGF
- Orientation: (111)A
- Size: 2" diameter x 0.5 mm
- Doping: S- doped
- Conducting type: S-C-N
- Polish: one side polished
- Resistivity: (0.87-1.19)x10^-3 ohm.cm
- Mobility: 1400-1670 cmE2/V.S
- EPD: N/A
- Carrier Concentration: (3.15-5.15) x10^18 /cm^3
- Surface Roughness: <4 nm
- EPI ready surface and packing
