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InAs (111)A, P Type, Zn doped 5x5 x 0.45 mm, one side polished - IAZncA0505045S1US5
2" InAs wafer (P type)
- 2" InAs wafer
- P Type, Zn doped
- Size: 5x5x0.45 mm +/-20 microns
- Orientation: <111>A
- Polishing: one-side polishd
- Resistivities: 5.1x10^-2 ohm-cm
- Packing: in 1000 class clean room with wafer container
Properties
- Growth method LEC
- Orientation (111) A
- Orientation Flat SEMI
- Doping Zn doped
- Conductivity type P type
- Carrier Concentration 6.4E17/ cm3
- Mobility 192 cm2/V.S
- Resistivity 5.1x10^-2 Ohm-Cm
- EPD 1.9E4 / cm 2
$99.00
InAs (111)A, P Type, Zn doped 5x5 x 0.45 mm, one side polished - IAZncA0505045S1US5—
$99.00
InAs (111)A, P Type, Zn doped 5x5 x 0.45 mm, one side polished - IAZncA0505045S1US5
2" InAs wafer (P type)
- 2" InAs wafer
- P Type, Zn doped
- Size: 5x5x0.45 mm +/-20 microns
- Orientation: <111>A
- Polishing: one-side polishd
- Resistivities: 5.1x10^-2 ohm-cm
- Packing: in 1000 class clean room with wafer container
Properties
- Growth method LEC
- Orientation (111) A
- Orientation Flat SEMI
- Doping Zn doped
- Conductivity type P type
- Carrier Concentration 6.4E17/ cm3
- Mobility 192 cm2/V.S
- Resistivity 5.1x10^-2 Ohm-Cm
- EPD 1.9E4 / cm 2
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
2" InAs wafer (P type)
- 2" InAs wafer
- P Type, Zn doped
- Size: 5x5x0.45 mm +/-20 microns
- Orientation: <111>A
- Polishing: one-side polishd
- Resistivities: 5.1x10^-2 ohm-cm
- Packing: in 1000 class clean room with wafer container
Properties
- Growth method LEC
- Orientation (111) A
- Orientation Flat SEMI
- Doping Zn doped
- Conductivity type P type
- Carrier Concentration 6.4E17/ cm3
- Mobility 192 cm2/V.S
- Resistivity 5.1x10^-2 Ohm-Cm
- EPD 1.9E4 / cm 2
