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InAs (111)A, undoped, N-type, 5mm x5mm x 0.45mm 1sp
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InAs (111)A, undoped, N-type, 5mm x5mm x 0.45mm 1sp

InAs (111)A, undoped, N-type, 5mm x5mm x 0.45mm 1sp

    •          Growth method                                     LEC
    •          Orientation                                            (111)A  ± 0.5  Deg
    •          Orientation Flat                                     SEMI       
    •          Doping                                                  Undoped
    •          Conductivity type                                   N type
    •          Carrier Concentration                           <2E16 / cm-3
    •          Mobility                                                >23400 cm2/V.S  
    •          EPD                                                     <10000 / cm 2
    •          Resistivity:                                           1.3x10^-2 ohm.cm
    •          Standard thickness                                 450 ± 25 mm
    •          Size:                                                   5 mm x 5mm
    •            Polish                                                               one-side polished

Related Product

Other InAs

 		InSb

 InP 

 GaAs


 GaSb



 Wafer Box

 Film Coater

 RTP Furnaces

$34.65

Original: $99.00

-65%
InAs (111)A, undoped, N-type, 5mm x5mm x 0.45mm 1sp—

$99.00

$34.65

InAs (111)A, undoped, N-type, 5mm x5mm x 0.45mm 1sp

    •          Growth method                                     LEC
    •          Orientation                                            (111)A  ± 0.5  Deg
    •          Orientation Flat                                     SEMI       
    •          Doping                                                  Undoped
    •          Conductivity type                                   N type
    •          Carrier Concentration                           <2E16 / cm-3
    •          Mobility                                                >23400 cm2/V.S  
    •          EPD                                                     <10000 / cm 2
    •          Resistivity:                                           1.3x10^-2 ohm.cm
    •          Standard thickness                                 450 ± 25 mm
    •          Size:                                                   5 mm x 5mm
    •            Polish                                                               one-side polished

Related Product

Other InAs

 		InSb

 InP 

 GaAs


 GaSb



 Wafer Box

 Film Coater

 RTP Furnaces

Product Information

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Description

    •          Growth method                                     LEC
    •          Orientation                                            (111)A  ± 0.5  Deg
    •          Orientation Flat                                     SEMI       
    •          Doping                                                  Undoped
    •          Conductivity type                                   N type
    •          Carrier Concentration                           <2E16 / cm-3
    •          Mobility                                                >23400 cm2/V.S  
    •          EPD                                                     <10000 / cm 2
    •          Resistivity:                                           1.3x10^-2 ohm.cm
    •          Standard thickness                                 450 ± 25 mm
    •          Size:                                                   5 mm x 5mm
    •            Polish                                                               one-side polished

Related Product

Other InAs

 		InSb

 InP 

 GaAs


 GaSb



 Wafer Box

 Film Coater

 RTP Furnaces

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