InAs (100), P Type, Zn doped 10x10 x 0.5 mm, one side polished

• InAs wafer    
• P Type, Zn doped
• Size:                     10x10x0.5mm
• Orientation:          <100> +/-0.5⁰
•  Polishing:             one-side polishd
• Resistivities:        0.0084 ohm-cm
• Packing:                 in 1000 class clean room with wafer container

Properties

• Growth method                                                 LEC
• Orientation                                                         (100)  +/- 0.5 ^o
• Orientation Flat                                                 SEMI                    
• Doping                                                                Zn doped
• Conductivity type                                               P type
• Carrier Concentration                                       5.3E18/ cm³
• Mobility                                                              126 cm²/V.S  
• Resistivity                                                          0.0084 ohm-cm
• EPD                                                                    1.2E4 / cm <sup>2
  
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