InAs (100), Undoped, 2" dia x 0.5 mm, two sides polished

2" InAs wafer (Ntype)

• 2" InAs wafer:                   (Undoped, N type)
• Size:                                  2" dia x 500 microns +/-25 microns
• Orientation:                       <100> +/-0.5⁰

•  Polishing:                          two sides  polished
• Growth Method:                LEC
• Major Flat Orientation:     <1-10>
• Minor Flat Orientation:     <0-11>
• Mobility:                             (18000-20000) cm^2/V.s
• Carrier Concentration:    < 3 E16 cm^-3
• EPD:                                  <5000 /cm^2
• Packing:                            in 1000 class clean room with wafer container

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