InAs (111)A, N type, undoped, 2" in dia x 0.45mm, 1sp

•                         Growth method                                     LEC
•                         Orientation                                            (111)A  ± 0.5  Deg
•                         Orientation Flat                                     SEMI       
•                         Doping                                                  Undoped
•                         Conductivity type                                   N type
•                         Carrier Concentration                           <2E16 / cm^-3
•                         Mobility                                                >23400 cm²/V.S  
•                         EPD                                                     <10000 / cm ²
•                         Resistivity:                              1.3x10^-2 ohm.cm
•                         Standard thickness                                 450 ± 25 mm
•                                 Standard diameter                               2"± 0.4mm
•                         Polish                                                   one-side

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