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InAs (100), un-doped 5x5x0.5mm, 1sp
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InAs (100), un-doped 5x5x0.5mm, 1sp

InAs (100), un-doped 5x5x0.5mm, 1sp

  •                         Growth method                                     LEC
  •                         Orientation                                           (100) +/- 0.5º
  •                         Orientation Flat                                     N/A              
  •                         Doping                                                 Undoped
  •                         Conductivity type                                   N type
  •                         Carrier Concentration                             <3E16 / cm3
  •                         Mobility                                                >20000 cm2/V.S  
  •                         EPD                                                     <5E4 / cm 2
  •                         Standard thickness                                 500+/- 20 mm
  •                         Standard size                                    5mm x 5mm
  •                         Polish                                                   one-side polished 


Related Product

Other InAs

 		InSb

 InP 

 GaAs


 GaSb



 Wafer Box

 Film Coater

 RTP Furnaces
$99.00
InAs (100), un-doped 5x5x0.5mm, 1sp—
$99.00

InAs (100), un-doped 5x5x0.5mm, 1sp

  •                         Growth method                                     LEC
  •                         Orientation                                           (100) +/- 0.5º
  •                         Orientation Flat                                     N/A              
  •                         Doping                                                 Undoped
  •                         Conductivity type                                   N type
  •                         Carrier Concentration                             <3E16 / cm3
  •                         Mobility                                                >20000 cm2/V.S  
  •                         EPD                                                     <5E4 / cm 2
  •                         Standard thickness                                 500+/- 20 mm
  •                         Standard size                                    5mm x 5mm
  •                         Polish                                                   one-side polished 


Related Product

Other InAs

 		InSb

 InP 

 GaAs


 GaSb



 Wafer Box

 Film Coater

 RTP Furnaces

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Description

  •                         Growth method                                     LEC
  •                         Orientation                                           (100) +/- 0.5º
  •                         Orientation Flat                                     N/A              
  •                         Doping                                                 Undoped
  •                         Conductivity type                                   N type
  •                         Carrier Concentration                             <3E16 / cm3
  •                         Mobility                                                >20000 cm2/V.S  
  •                         EPD                                                     <5E4 / cm 2
  •                         Standard thickness                                 500+/- 20 mm
  •                         Standard size                                    5mm x 5mm
  •                         Polish                                                   one-side polished 


Related Product

Other InAs

 		InSb

 InP 

 GaAs


 GaSb



 Wafer Box

 Film Coater

 RTP Furnaces
InAs (100), un-doped 5x5x0.5mm, 1sp | MTI Online Store