🚚 Free Worldwide Shipping on All Orders!Shop Now
InAs (100), undoped 30mm dia wafer 1sp - IAUa30D05C1US
- Growth method LEC
- Orientation (100) ± 0.5 Deg
- Doping Undoped
- Conductivity type N type
- Carrier Concentration <3E16 / cm3
- Mobility >20000 cm2/V.S
- EPD <5E4 / cm 2
- Standard thickness 500 ± 20 mm
- Standard diameter 30 mm
- Polish one-side
Related Product
Other InAs
|
InSb
|
InP
|
GaAs |
GaSb |
Wafer Box
|
Film Coater
|
RTP Furnaces
|
$209.65
Original: $599.00
-65%InAs (100), undoped 30mm dia wafer 1sp - IAUa30D05C1US—
$599.00
$209.65InAs (100), undoped 30mm dia wafer 1sp - IAUa30D05C1US
- Growth method LEC
- Orientation (100) ± 0.5 Deg
- Doping Undoped
- Conductivity type N type
- Carrier Concentration <3E16 / cm3
- Mobility >20000 cm2/V.S
- EPD <5E4 / cm 2
- Standard thickness 500 ± 20 mm
- Standard diameter 30 mm
- Polish one-side
Related Product
| Other InAs
|
InSb
|
InP
|
GaAs |
GaSb |
Wafer Box
|
Film Coater
|
RTP Furnaces
|
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
- Growth method LEC
- Orientation (100) ± 0.5 Deg
- Doping Undoped
- Conductivity type N type
- Carrier Concentration <3E16 / cm3
- Mobility >20000 cm2/V.S
- EPD <5E4 / cm 2
- Standard thickness 500 ± 20 mm
- Standard diameter 30 mm
- Polish one-side
Related Product
| Other InAs
|
InSb
|
InP
|
GaAs |
GaSb |
Wafer Box
|
Film Coater
|
RTP Furnaces
|
