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InAs (100), S-doped 10x10x0.5mm, 1sp - IASa101005S1
- Growth method LEC
- Orientation (100)
- Orientation Flat N/A
- Doping S-doped
- Conductivity type N type
- Carrier Concentration 1x10E18 cmE-3
- Mobility 9000 cm2/V.S
- Standard thickness 0.5mm
- Standard size 10mm x 10mm
- Polish one-side
Related Product
Other InAs
|
InSb
|
InP
|
GaAs |
GaSb |
Wafer Box
|
Film Coater
|
RTP Furnaces
|
$66.15
Original: $189.00
-65%InAs (100), S-doped 10x10x0.5mm, 1sp - IASa101005S1—
$189.00
$66.15InAs (100), S-doped 10x10x0.5mm, 1sp - IASa101005S1
- Growth method LEC
- Orientation (100)
- Orientation Flat N/A
- Doping S-doped
- Conductivity type N type
- Carrier Concentration 1x10E18 cmE-3
- Mobility 9000 cm2/V.S
- Standard thickness 0.5mm
- Standard size 10mm x 10mm
- Polish one-side
Related Product
| Other InAs
|
InSb
|
InP
|
GaAs |
GaSb |
Wafer Box
|
Film Coater
|
RTP Furnaces
|
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Product Information
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Description
- Growth method LEC
- Orientation (100)
- Orientation Flat N/A
- Doping S-doped
- Conductivity type N type
- Carrier Concentration 1x10E18 cmE-3
- Mobility 9000 cm2/V.S
- Standard thickness 0.5mm
- Standard size 10mm x 10mm
- Polish one-side
Related Product
| Other InAs
|
InSb
|
InP
|
GaAs |
GaSb |
Wafer Box
|
Film Coater
|
RTP Furnaces
|
