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VGF-GaAs (100) N-type Si doped 2" dia x 0.5 mm, 1sp,cc:(0.63-1.17) x 10^18/cm^3
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (100)
- Size: 2" dia x 0.5mm
- Polishing: One side polished
- Doping: Si doped
- Conductor type: N-type
- Carrier Concentration: (0.63 - 1.33) x 10^18 /cm^3
- Mobility: (2170 - 2920) cm^2/V.S
- Resistivity: (2.12 - 3.55) E-3 ohm.cm
- EPD: < 5000cm^2
- Ra(Average Roughness): < 0.4 nm
- EPI ready surface and packing
$204.75
Original: $585.00
-65%VGF-GaAs (100) N-type Si doped 2" dia x 0.5 mm, 1sp,cc:(0.63-1.17) x 10^18/cm^3—
$585.00
$204.75VGF-GaAs (100) N-type Si doped 2" dia x 0.5 mm, 1sp,cc:(0.63-1.17) x 10^18/cm^3
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (100)
- Size: 2" dia x 0.5mm
- Polishing: One side polished
- Doping: Si doped
- Conductor type: N-type
- Carrier Concentration: (0.63 - 1.33) x 10^18 /cm^3
- Mobility: (2170 - 2920) cm^2/V.S
- Resistivity: (2.12 - 3.55) E-3 ohm.cm
- EPD: < 5000cm^2
- Ra(Average Roughness): < 0.4 nm
- EPI ready surface and packing
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (100)
- Size: 2" dia x 0.5mm
- Polishing: One side polished
- Doping: Si doped
- Conductor type: N-type
- Carrier Concentration: (0.63 - 1.33) x 10^18 /cm^3
- Mobility: (2170 - 2920) cm^2/V.S
- Resistivity: (2.12 - 3.55) E-3 ohm.cm
- EPD: < 5000cm^2
- Ra(Average Roughness): < 0.4 nm
- EPI ready surface and packing
