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VGF-GaAs (100) orientation, Si-doped 10x10x 0.5mm, 1sp
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VGF-GaAs (100) orientation, Si-doped 10x10x 0.5mm, 1sp

VGF-GaAs (100) orientation, Si-doped 10x10x 0.5mm, 1sp

GaAs single crystal wafer
Growing Method:              VGF
Orientation:                      (100)
Size:                              10x10x0.5mm
Polishing:                         one side polished
Doping:                            Si doped
Conductor type:                S-C-N
Carrier Concentration:        (7.2-11.7) x 10^17 /cm^3
Mobility:                           2170-2650 cm^2/V.S
EPD:                               <5000/cm^2
resistivity:                         (2.56-3.55)x10^-3 ohm.cm
Ra(Average Roughness) :  < 0.4 nm

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$62.65

Original: $179.00

-65%
VGF-GaAs (100) orientation, Si-doped 10x10x 0.5mm, 1sp—

$179.00

$62.65

VGF-GaAs (100) orientation, Si-doped 10x10x 0.5mm, 1sp

GaAs single crystal wafer
Growing Method:              VGF
Orientation:                      (100)
Size:                              10x10x0.5mm
Polishing:                         one side polished
Doping:                            Si doped
Conductor type:                S-C-N
Carrier Concentration:        (7.2-11.7) x 10^17 /cm^3
Mobility:                           2170-2650 cm^2/V.S
EPD:                               <5000/cm^2
resistivity:                         (2.56-3.55)x10^-3 ohm.cm
Ra(Average Roughness) :  < 0.4 nm

Related Products

Other GaAs


 InSb

 Other InAs

 		 InP 


 GaSb

 Wafer Box

 Film Coater

 RTP Furnaces

Product Information

Shipping & Returns

Description

GaAs single crystal wafer
Growing Method:              VGF
Orientation:                      (100)
Size:                              10x10x0.5mm
Polishing:                         one side polished
Doping:                            Si doped
Conductor type:                S-C-N
Carrier Concentration:        (7.2-11.7) x 10^17 /cm^3
Mobility:                           2170-2650 cm^2/V.S
EPD:                               <5000/cm^2
resistivity:                         (2.56-3.55)x10^-3 ohm.cm
Ra(Average Roughness) :  < 0.4 nm

Related Products

Other GaAs


 InSb

 Other InAs

 		 InP 


 GaSb

 Wafer Box

 Film Coater

 RTP Furnaces

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