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GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x3 x0.5 mm, 2SP
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (100)
- Size: 10x3 x 0.5mm
- Polishing: two sides polished;
- Ra(Average Roughness) : < 0.4 nm
- Doping: undoped
- Conductor type: Semi-Insulating
- Resistivity: (0.6-2.0)E8 Ohm.cm
- Mobility: 5350-6380 cm^2/v.s.
- EPD: <5000/cm2
$59.15
Original: $169.00
-65%GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x3 x0.5 mm, 2SP—
$169.00
$59.15GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x3 x0.5 mm, 2SP
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (100)
- Size: 10x3 x 0.5mm
- Polishing: two sides polished;
- Ra(Average Roughness) : < 0.4 nm
- Doping: undoped
- Conductor type: Semi-Insulating
- Resistivity: (0.6-2.0)E8 Ohm.cm
- Mobility: 5350-6380 cm^2/v.s.
- EPD: <5000/cm2
Product Information
Product Information
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Shipping & Returns
Description
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (100)
- Size: 10x3 x 0.5mm
- Polishing: two sides polished;
- Ra(Average Roughness) : < 0.4 nm
- Doping: undoped
- Conductor type: Semi-Insulating
- Resistivity: (0.6-2.0)E8 Ohm.cm
- Mobility: 5350-6380 cm^2/v.s.
- EPD: <5000/cm2
