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GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.5 mm, 1SP
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (100)
- Size: 10x10 x 0.5mm
- Polishing: one side polished;
- Ra(Average Roughness) : < 0.4 nm
- Doping: undoped
- Conductor type: Semi-Insulating
- Resistivity: (0.65-3.24)E8 Ohm.cm
- Mobility: 4700-5630cm^2/v.s.
- EPD: <5000/cm2
$62.65
Original: $179.00
-65%GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.5 mm, 1SP—
$179.00
$62.65GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.5 mm, 1SP
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (100)
- Size: 10x10 x 0.5mm
- Polishing: one side polished;
- Ra(Average Roughness) : < 0.4 nm
- Doping: undoped
- Conductor type: Semi-Insulating
- Resistivity: (0.65-3.24)E8 Ohm.cm
- Mobility: 4700-5630cm^2/v.s.
- EPD: <5000/cm2
Product Information
Product Information
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Shipping & Returns
Description
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (100)
- Size: 10x10 x 0.5mm
- Polishing: one side polished;
- Ra(Average Roughness) : < 0.4 nm
- Doping: undoped
- Conductor type: Semi-Insulating
- Resistivity: (0.65-3.24)E8 Ohm.cm
- Mobility: 4700-5630cm^2/v.s.
- EPD: <5000/cm2
