GaAs Wafer - Growing Method: VGF (100), Zn doped, P-Type, 3"x0.5 mm, 1sp

GaAs single crystal wafer
Growing Method:              VGF
Orientation:                      (100)
Size:                               3" dia x 0.5mm
Polishing:                         one side polished
Doping:                            Zn doped
Conductor type:                S-C-P
Carrier Concentration:        (5.01-6.30) x 10^17 /cm^3
Mobility:                          184-200cm^2/V.S
EPD:                               <5000/cm^2

resistivity:                         (5.14-6.67)x10^-2 ohm.cm
Ra(Average Roughness) :  < 0.4 nm
Note: EPI ready wafers

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