GaAs Wafer - Growing Method: VGF (100) Zn doped P-type, , 2"x0.5 mm, 1sp, (5.17-9.38) x 10^17 /cm^3

GaAs single crystal wafer
Growing Method:           VGF
Orientation:                    (100)
Size:                             2" dia x 0.5mm
Polishing:                      one side polished
Doping:                          Zn doped
Conductor type:              S-C-P
Carrier Concentration:      (5.17-9.38) x 10^17 /cm^3

Mobility: 1                       168-188 cm^2/V.S

EPD:                              <5000/cm^2

Resistivity:                      (3.96-6.67)x10^-2 ohm.cm

Ra(Average Roughness) : < 0.4 nm

Note: EPI ready wafers

Related Products

Other GaAs

InSb

Other InAs

InP

GaSb

Wafer Box

Film Coater

RTP Furnaces