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GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 3"D x0.5 mm, 1SP
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GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 3"D x0.5 mm, 1SP

GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 3"D x0.5 mm, 1SP

GaAs single crystal wafer
Growing Method:               VGF
Orientation:                      (100)
Size:                                3" dia x 0.5mm
Polishing:                          one side polished
Doping:                             undoped
Conductor type:                Semi-Insulating
Resistivity:                        (1.35-4.21)x10^8Ohm.cm
Mobility:                           4360-5640cm^2/V.S
EPD:                                <5000cm^-2
Primary Flat:                    EJ(0-1-1)
Secondary Flat:                EJ(0-11)
Ra(Average Roughness) :   < 0.4 nm



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$230.65

Original: $659.00

-65%
GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 3"D x0.5 mm, 1SP—

$659.00

$230.65

GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 3"D x0.5 mm, 1SP

GaAs single crystal wafer
Growing Method:               VGF
Orientation:                      (100)
Size:                                3" dia x 0.5mm
Polishing:                          one side polished
Doping:                             undoped
Conductor type:                Semi-Insulating
Resistivity:                        (1.35-4.21)x10^8Ohm.cm
Mobility:                           4360-5640cm^2/V.S
EPD:                                <5000cm^-2
Primary Flat:                    EJ(0-1-1)
Secondary Flat:                EJ(0-11)
Ra(Average Roughness) :   < 0.4 nm



Related Products

Other GaAs


 InSb

 Other InAs

 		 InP 


 GaSb

 Wafer Box

 Film Coater

 RTP Furnaces

Product Information

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Description

GaAs single crystal wafer
Growing Method:               VGF
Orientation:                      (100)
Size:                                3" dia x 0.5mm
Polishing:                          one side polished
Doping:                             undoped
Conductor type:                Semi-Insulating
Resistivity:                        (1.35-4.21)x10^8Ohm.cm
Mobility:                           4360-5640cm^2/V.S
EPD:                                <5000cm^-2
Primary Flat:                    EJ(0-1-1)
Secondary Flat:                EJ(0-11)
Ra(Average Roughness) :   < 0.4 nm



Related Products

Other GaAs


 InSb

 Other InAs

 		 InP 


 GaSb

 Wafer Box

 Film Coater

 RTP Furnaces

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