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GaAs Wafer , Growing Method: VGF ,(100) undoped Semi-Insulated 100mm D x0.6 mm, 1SP
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (100)
- Flat: (01-1) .(011)
- Size: 100 mm dia x 0.6mm
- Polishing: one side polished
- Ra(Average Roughness) : < 0.4 nm
- Doping: undoped
- Conductor type: Semi-Insulating
- Resistivity: (0.39-4.75)E8 Ohm.cm
- Mobility: 4120-6820 cm^2/v.s.
- EPD: <5000/cm2
- EPI ready surface and packing
$799.00
GaAs Wafer , Growing Method: VGF ,(100) undoped Semi-Insulated 100mm D x0.6 mm, 1SP—
$799.00
GaAs Wafer , Growing Method: VGF ,(100) undoped Semi-Insulated 100mm D x0.6 mm, 1SP
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (100)
- Flat: (01-1) .(011)
- Size: 100 mm dia x 0.6mm
- Polishing: one side polished
- Ra(Average Roughness) : < 0.4 nm
- Doping: undoped
- Conductor type: Semi-Insulating
- Resistivity: (0.39-4.75)E8 Ohm.cm
- Mobility: 4120-6820 cm^2/v.s.
- EPD: <5000/cm2
- EPI ready surface and packing
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (100)
- Flat: (01-1) .(011)
- Size: 100 mm dia x 0.6mm
- Polishing: one side polished
- Ra(Average Roughness) : < 0.4 nm
- Doping: undoped
- Conductor type: Semi-Insulating
- Resistivity: (0.39-4.75)E8 Ohm.cm
- Mobility: 4120-6820 cm^2/v.s.
- EPD: <5000/cm2
- EPI ready surface and packing
