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GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated, 100mm D x 0.6 mm, 2SP
- GaAs single crystal wafer
-
Growing Method: VGF
- Orientation: (100)
- Flat: (01-1) .(011)
- Size: 100mm dia x 0.6mm
- Polishing: two sides polished
- Ra(Average Roughness) : < 0.4 nm
- Doping: undoped
- Conductor type: Semi-Insulating
- Resistivity: (1.41-4.4)E8 Ohm.cm
- Mobility: 3240-6000 cm2 / v.s.
- EPD: <5000/cm2
- EPI ready surface and packing
$279.65
Original: $799.00
-65%GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated, 100mm D x 0.6 mm, 2SP—
$799.00
$279.65GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated, 100mm D x 0.6 mm, 2SP
- GaAs single crystal wafer
-
Growing Method: VGF
- Orientation: (100)
- Flat: (01-1) .(011)
- Size: 100mm dia x 0.6mm
- Polishing: two sides polished
- Ra(Average Roughness) : < 0.4 nm
- Doping: undoped
- Conductor type: Semi-Insulating
- Resistivity: (1.41-4.4)E8 Ohm.cm
- Mobility: 3240-6000 cm2 / v.s.
- EPD: <5000/cm2
- EPI ready surface and packing
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
- GaAs single crystal wafer
-
Growing Method: VGF
- Orientation: (100)
- Flat: (01-1) .(011)
- Size: 100mm dia x 0.6mm
- Polishing: two sides polished
- Ra(Average Roughness) : < 0.4 nm
- Doping: undoped
- Conductor type: Semi-Insulating
- Resistivity: (1.41-4.4)E8 Ohm.cm
- Mobility: 3240-6000 cm2 / v.s.
- EPD: <5000/cm2
- EPI ready surface and packing
