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GaAs, VGF Grown (110) orientation, SI, undoped, 2" dia x 0.5mm, 2sp - GAUe50D05C2-US
- GaAs single crystal wafer
-
Growing Method: VGF
- Orientation: (110)
- Size: 2" dia x 0.5mm
- Polishing: two sides polished
- Doping: undoped,
- Conductor type: SI (Semi-insulating )
- Carrier Concentration: N/A
- Mobility: 3710-6230 cm^2/V.S
- EPD: N/A
- Resistivity: (0.8-4.8)E8 ohm.cm
- Ra(Average Roughness) : < 0.4 nm
- EPI ready surface and packing
$279.65
Original: $799.00
-65%GaAs, VGF Grown (110) orientation, SI, undoped, 2" dia x 0.5mm, 2sp - GAUe50D05C2-US—
$799.00
$279.65GaAs, VGF Grown (110) orientation, SI, undoped, 2" dia x 0.5mm, 2sp - GAUe50D05C2-US
- GaAs single crystal wafer
-
Growing Method: VGF
- Orientation: (110)
- Size: 2" dia x 0.5mm
- Polishing: two sides polished
- Doping: undoped,
- Conductor type: SI (Semi-insulating )
- Carrier Concentration: N/A
- Mobility: 3710-6230 cm^2/V.S
- EPD: N/A
- Resistivity: (0.8-4.8)E8 ohm.cm
- Ra(Average Roughness) : < 0.4 nm
- EPI ready surface and packing
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
- GaAs single crystal wafer
-
Growing Method: VGF
- Orientation: (110)
- Size: 2" dia x 0.5mm
- Polishing: two sides polished
- Doping: undoped,
- Conductor type: SI (Semi-insulating )
- Carrier Concentration: N/A
- Mobility: 3710-6230 cm^2/V.S
- EPD: N/A
- Resistivity: (0.8-4.8)E8 ohm.cm
- Ra(Average Roughness) : < 0.4 nm
- EPI ready surface and packing
