
GaAs, VGF Grown (110) ori. un-doped, 5x5x0.5mm, 1sp
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (110)
- Size: 5x5x0.5mm
- Polishing: One side polished
- Doping: un-doped
- Conductor type: S-I
- Mobility: 3990-5030 cm^2/V.S
- Resistivity :( 2.5-5.1)x10^8 ohm.cm
- Ra(Average Roughness) : < 0.4 nm
GaAs, VGF Grown (110) ori. un-doped, 5x5x0.5mm, 1sp
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (110)
- Size: 5x5x0.5mm
- Polishing: One side polished
- Doping: un-doped
- Conductor type: S-I
- Mobility: 3990-5030 cm^2/V.S
- Resistivity :( 2.5-5.1)x10^8 ohm.cm
- Ra(Average Roughness) : < 0.4 nm
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Description
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (110)
- Size: 5x5x0.5mm
- Polishing: One side polished
- Doping: un-doped
- Conductor type: S-I
- Mobility: 3990-5030 cm^2/V.S
- Resistivity :( 2.5-5.1)x10^8 ohm.cm
- Ra(Average Roughness) : < 0.4 nm











