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GaAs, VGF Grown (110) ori. N type, Si-doped, 10x10x0.3mm, 2sp
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (110)
- Size: 10 x 10 x 0.3-0.35 mm
- Polishing: Two sides polished
- Doping: Si-doped
- Conductor type: S-C-N
- Carrier Concentration:(2.49-3.27)x10^18/c.c
- Mobility: 1630- 1870cm^2/V.S
- Resistivity :( 1.17-1.4)x10^-3 ohm.cm
- Ra(Average Roughness) : < 0.4 nm
$97.65
Original: $279.00
-65%GaAs, VGF Grown (110) ori. N type, Si-doped, 10x10x0.3mm, 2sp—
$279.00
$97.65GaAs, VGF Grown (110) ori. N type, Si-doped, 10x10x0.3mm, 2sp
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (110)
- Size: 10 x 10 x 0.3-0.35 mm
- Polishing: Two sides polished
- Doping: Si-doped
- Conductor type: S-C-N
- Carrier Concentration:(2.49-3.27)x10^18/c.c
- Mobility: 1630- 1870cm^2/V.S
- Resistivity :( 1.17-1.4)x10^-3 ohm.cm
- Ra(Average Roughness) : < 0.4 nm
Product Information
Product Information
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Shipping & Returns
Description
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (110)
- Size: 10 x 10 x 0.3-0.35 mm
- Polishing: Two sides polished
- Doping: Si-doped
- Conductor type: S-C-N
- Carrier Concentration:(2.49-3.27)x10^18/c.c
- Mobility: 1630- 1870cm^2/V.S
- Resistivity :( 1.17-1.4)x10^-3 ohm.cm
- Ra(Average Roughness) : < 0.4 nm
