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GaAs - VGF (110) orientation, Zn-doped, P-type, 3" dia x 0.5mm, 2sp - GAZne76D05C2US5
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (110)
- Size: 3" dia x 0.5mm
- Polishing: Two sides polished
- Doping: Zn-doped
- Conductor type: P-type
- Carrier Concentration: (1.3-1.4)E19/cm^3
- Mobility: 71-74 cm^2/V.S
- Ra(Average Roughness) : < 0.4 nm
- Resistivity : (6.1-6.6)x10^-3ohm.cm
- EPI ready surface and packing
$349.65
Original: $999.00
-65%GaAs - VGF (110) orientation, Zn-doped, P-type, 3" dia x 0.5mm, 2sp - GAZne76D05C2US5—
$999.00
$349.65GaAs - VGF (110) orientation, Zn-doped, P-type, 3" dia x 0.5mm, 2sp - GAZne76D05C2US5
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (110)
- Size: 3" dia x 0.5mm
- Polishing: Two sides polished
- Doping: Zn-doped
- Conductor type: P-type
- Carrier Concentration: (1.3-1.4)E19/cm^3
- Mobility: 71-74 cm^2/V.S
- Ra(Average Roughness) : < 0.4 nm
- Resistivity : (6.1-6.6)x10^-3ohm.cm
- EPI ready surface and packing
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (110)
- Size: 3" dia x 0.5mm
- Polishing: Two sides polished
- Doping: Zn-doped
- Conductor type: P-type
- Carrier Concentration: (1.3-1.4)E19/cm^3
- Mobility: 71-74 cm^2/V.S
- Ra(Average Roughness) : < 0.4 nm
- Resistivity : (6.1-6.6)x10^-3ohm.cm
- EPI ready surface and packing
