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GaAs( LEC ) Wafer (110) undoped Semi-Insulated 2"D x 2.8 mm, as cut
- GaAs single crystal wafer
- Growing Method: LEC
- Orientation: (110)
- Size: 2" dia x 2.8 mm
- Polishing: As Cut
- Doping: undoped
- Conductor type: Semi-Insulating
- Resistivity: >1 x 107 Ohm.cm
- Mobility: 4500 cm 2/ V.S
- Carrire Concentration: <1 x108 cm^-3
- EPD: < 5x104/cm-2
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$1,999.00
GaAs( LEC ) Wafer (110) undoped Semi-Insulated 2"D x 2.8 mm, as cut—
$1,999.00
GaAs( LEC ) Wafer (110) undoped Semi-Insulated 2"D x 2.8 mm, as cut
- GaAs single crystal wafer
- Growing Method: LEC
- Orientation: (110)
- Size: 2" dia x 2.8 mm
- Polishing: As Cut
- Doping: undoped
- Conductor type: Semi-Insulating
- Resistivity: >1 x 107 Ohm.cm
- Mobility: 4500 cm 2/ V.S
- Carrire Concentration: <1 x108 cm^-3
- EPD: < 5x104/cm-2
Related Products
| Other GaAs |
InSb
|
Other InAs
|
InP |
GaSb
|
Wafer Box
|
Film Coater
|
RTP Furnaces |
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
- GaAs single crystal wafer
- Growing Method: LEC
- Orientation: (110)
- Size: 2" dia x 2.8 mm
- Polishing: As Cut
- Doping: undoped
- Conductor type: Semi-Insulating
- Resistivity: >1 x 107 Ohm.cm
- Mobility: 4500 cm 2/ V.S
- Carrire Concentration: <1 x108 cm^-3
- EPD: < 5x104/cm-2
Related Products
| Other GaAs |
InSb
|
Other InAs
|
InP |
GaSb
|
Wafer Box
|
Film Coater
|
RTP Furnaces |
