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GaAs, Growing Method: VGF(100) Si doped, N-type, 3" dia x 0.625mm, 2sp, Carrier Concentration: (1.4-3.96) x 10^18 /cm^3 - GASia76D0625C2US5
GaAs, Growing Method: VGF(100) Si doped, N-type, 3" dia x 0.625mm, 2sp, Carrier Concentration: (1.4-3.96) x 10^18 /cm^3 - GASia76D0625C2US5
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (100)+/- 0.5 degree
- Size: 3" dia x 0.625mm
- Polishing: two sides polished
- Doping: Si doped
- Conductor type: S-C-N
- Carrier Concentration: (1.06-3.96) x 10^18/cm^3
- Mobility: 1420-2480 cm^2/V.S
- Resistivity: (1.1-2.38) E-3 ohm.cm
- EPD: <1000cm^2
- Ra(Average Roughness) : < 0.4 nm
- EPI ready surface and packing
$244.65
Original: $699.00
-65%GaAs, Growing Method: VGF(100) Si doped, N-type, 3" dia x 0.625mm, 2sp, Carrier Concentration: (1.4-3.96) x 10^18 /cm^3 - GASia76D0625C2US5—
$699.00
$244.65GaAs, Growing Method: VGF(100) Si doped, N-type, 3" dia x 0.625mm, 2sp, Carrier Concentration: (1.4-3.96) x 10^18 /cm^3 - GASia76D0625C2US5
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (100)+/- 0.5 degree
- Size: 3" dia x 0.625mm
- Polishing: two sides polished
- Doping: Si doped
- Conductor type: S-C-N
- Carrier Concentration: (1.06-3.96) x 10^18/cm^3
- Mobility: 1420-2480 cm^2/V.S
- Resistivity: (1.1-2.38) E-3 ohm.cm
- EPD: <1000cm^2
- Ra(Average Roughness) : < 0.4 nm
- EPI ready surface and packing
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Product Information
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Shipping & Returns
Description
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (100)+/- 0.5 degree
- Size: 3" dia x 0.625mm
- Polishing: two sides polished
- Doping: Si doped
- Conductor type: S-C-N
- Carrier Concentration: (1.06-3.96) x 10^18/cm^3
- Mobility: 1420-2480 cm^2/V.S
- Resistivity: (1.1-2.38) E-3 ohm.cm
- EPD: <1000cm^2
- Ra(Average Roughness) : < 0.4 nm
- EPI ready surface and packing
