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GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 2sp
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GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 2sp

GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 2sp

  • GaAs single crystal wafer
  • Growing Method:                VGF
  • Orientation:                        (100)
  • Size:                                 2" dia x 0.35 mm
  • Polishing:                          Two sides polished
  • Doping:                             Si doped
  • Conductor type:                 N-type
  • Carrier Concentration:       (1.60-3.94) E18 /cm^3
  • Mobility:                           (1400-2100) cm^2/V.S
  • Resistivity:                       (1.08-1.90) E-3  ohm.cm
  • EPD:                                < 500cm^2
  • Ra(Average Roughness) :  < 0.4 nm
  • EPI ready surface and packing 
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GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 2sp—
$595.00

GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 2sp

  • GaAs single crystal wafer
  • Growing Method:                VGF
  • Orientation:                        (100)
  • Size:                                 2" dia x 0.35 mm
  • Polishing:                          Two sides polished
  • Doping:                             Si doped
  • Conductor type:                 N-type
  • Carrier Concentration:       (1.60-3.94) E18 /cm^3
  • Mobility:                           (1400-2100) cm^2/V.S
  • Resistivity:                       (1.08-1.90) E-3  ohm.cm
  • EPD:                                < 500cm^2
  • Ra(Average Roughness) :  < 0.4 nm
  • EPI ready surface and packing 
Related Products

Other GaAs


 InSb

 Other InAs

 		 InP 


 GaSb

 Wafer Box

 Film Coater

 RTP Furnaces

Product Information

Shipping & Returns

Description

  • GaAs single crystal wafer
  • Growing Method:                VGF
  • Orientation:                        (100)
  • Size:                                 2" dia x 0.35 mm
  • Polishing:                          Two sides polished
  • Doping:                             Si doped
  • Conductor type:                 N-type
  • Carrier Concentration:       (1.60-3.94) E18 /cm^3
  • Mobility:                           (1400-2100) cm^2/V.S
  • Resistivity:                       (1.08-1.90) E-3  ohm.cm
  • EPD:                                < 500cm^2
  • Ra(Average Roughness) :  < 0.4 nm
  • EPI ready surface and packing 
Related Products

Other GaAs


 InSb

 Other InAs

 		 InP 


 GaSb

 Wafer Box

 Film Coater

 RTP Furnaces

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