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GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 1sp,cc: (1.65-3.92) x 10^18 /cm^3
GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 1sp,cc: (1.65-3.92) x 10^18 /cm^3
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (100)
- Size: 2" dia x 0.35mm
- Polishing: One side polished
- Doping: Si doped
- Conductor type: N-type
- Carrier Concentration: (1.65 - 3.92) x 10^18 /cm^3
- Mobility: 1440 - 2270 cm^2/V.S
- Resistivity: (1.01 - 1.90) E-3 ohm.cm
- EPD: < 500 cm^2
- Ra(Average Roughness) : < 0.4 nm
- EPI ready surface and packing
$204.75
Original: $585.00
-65%GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 1sp,cc: (1.65-3.92) x 10^18 /cm^3—
$585.00
$204.75GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 1sp,cc: (1.65-3.92) x 10^18 /cm^3
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (100)
- Size: 2" dia x 0.35mm
- Polishing: One side polished
- Doping: Si doped
- Conductor type: N-type
- Carrier Concentration: (1.65 - 3.92) x 10^18 /cm^3
- Mobility: 1440 - 2270 cm^2/V.S
- Resistivity: (1.01 - 1.90) E-3 ohm.cm
- EPD: < 500 cm^2
- Ra(Average Roughness) : < 0.4 nm
- EPI ready surface and packing
Product Information
Product Information
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Shipping & Returns
Description
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (100)
- Size: 2" dia x 0.35mm
- Polishing: One side polished
- Doping: Si doped
- Conductor type: N-type
- Carrier Concentration: (1.65 - 3.92) x 10^18 /cm^3
- Mobility: 1440 - 2270 cm^2/V.S
- Resistivity: (1.01 - 1.90) E-3 ohm.cm
- EPD: < 500 cm^2
- Ra(Average Roughness) : < 0.4 nm
- EPI ready surface and packing
