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GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.5mm, 1sp, Prime Grade - GATea50D05C1deg2US
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GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.5mm, 1sp, Prime Grade - GATea50D05C1deg2US

GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.5mm, 1sp, Prime Grade - GATea50D05C1deg2US

  • GaAs single crystal wafer, PRIME Grade
  • Growing Method:           VGF
  • Orientation:                   (100) 2 degree OFF Toward [101] +/- 0.5 deg
  • Size:                              2" dia x 0.5mm
  • Polishing:                       One  side polished
  • Doping:                          Te doped
  • Conductor type:               N-type
  • Carrier Concentration:      (0.15-2.6) E18 /cm^3
  • Mobility:                         2700~3600 cm^2/V.S
  • Resistivity:                      9E-4~1.1E-2 ohm-cm
  • EPD:                              <8000/cm^2
  • Note:                              EPI polishing: RMS < 5 Angstrom
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$192.15

Original: $549.00

-65%
GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.5mm, 1sp, Prime Grade - GATea50D05C1deg2US—

$549.00

$192.15

GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.5mm, 1sp, Prime Grade - GATea50D05C1deg2US

  • GaAs single crystal wafer, PRIME Grade
  • Growing Method:           VGF
  • Orientation:                   (100) 2 degree OFF Toward [101] +/- 0.5 deg
  • Size:                              2" dia x 0.5mm
  • Polishing:                       One  side polished
  • Doping:                          Te doped
  • Conductor type:               N-type
  • Carrier Concentration:      (0.15-2.6) E18 /cm^3
  • Mobility:                         2700~3600 cm^2/V.S
  • Resistivity:                      9E-4~1.1E-2 ohm-cm
  • EPD:                              <8000/cm^2
  • Note:                              EPI polishing: RMS < 5 Angstrom
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Description

  • GaAs single crystal wafer, PRIME Grade
  • Growing Method:           VGF
  • Orientation:                   (100) 2 degree OFF Toward [101] +/- 0.5 deg
  • Size:                              2" dia x 0.5mm
  • Polishing:                       One  side polished
  • Doping:                          Te doped
  • Conductor type:               N-type
  • Carrier Concentration:      (0.15-2.6) E18 /cm^3
  • Mobility:                         2700~3600 cm^2/V.S
  • Resistivity:                      9E-4~1.1E-2 ohm-cm
  • EPD:                              <8000/cm^2
  • Note:                              EPI polishing: RMS < 5 Angstrom
Related Products

Other GaAs


 InSb

 Other InAs

 		 InP 


 GaSb

 Wafer Box

 Film Coater

 RTP Furnaces
GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.5mm, 1sp, Prime Grade - GATea50D05C1deg2US | MTI Online Store