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GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.485mm, 1sp, Prime Grade - GATea50D0485C1deg2US
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GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.485mm, 1sp, Prime Grade - GATea50D0485C1deg2US

GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.485mm, 1sp, Prime Grade - GATea50D0485C1deg2US

  • GaAs single crystal wafer, PRIME Grade
  • Growing Method:          VGF
  • Orientation:                  (100) 2 degree OFF Toward [101] +/- 0.5 deg
  • Size:                            2" dia x 0.485mm
  • Polishing:                     One  side polished
  • Doping:                        Te doped
  • Conductor type:            N-type
  • Carrier Concentration:    (0.1-0.6) x 10^18 /cm^3
  • Mobility:                       3500-3600 cm^2/V.S
  • Resistivity:                    (2.9-10.7) E-3 ohm-cm
  • EPD:                            <8000/cm^2
  • Note:                            EPI polishing: RMS < 5 Angstrom


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$192.15

Original: $549.00

-65%
GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.485mm, 1sp, Prime Grade - GATea50D0485C1deg2US—

$549.00

$192.15

GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.485mm, 1sp, Prime Grade - GATea50D0485C1deg2US

  • GaAs single crystal wafer, PRIME Grade
  • Growing Method:          VGF
  • Orientation:                  (100) 2 degree OFF Toward [101] +/- 0.5 deg
  • Size:                            2" dia x 0.485mm
  • Polishing:                     One  side polished
  • Doping:                        Te doped
  • Conductor type:            N-type
  • Carrier Concentration:    (0.1-0.6) x 10^18 /cm^3
  • Mobility:                       3500-3600 cm^2/V.S
  • Resistivity:                    (2.9-10.7) E-3 ohm-cm
  • EPD:                            <8000/cm^2
  • Note:                            EPI polishing: RMS < 5 Angstrom


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Other GaAs


 InSb

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 		 InP 


 GaSb

 Wafer Box

 Film Coater

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Description

  • GaAs single crystal wafer, PRIME Grade
  • Growing Method:          VGF
  • Orientation:                  (100) 2 degree OFF Toward [101] +/- 0.5 deg
  • Size:                            2" dia x 0.485mm
  • Polishing:                     One  side polished
  • Doping:                        Te doped
  • Conductor type:            N-type
  • Carrier Concentration:    (0.1-0.6) x 10^18 /cm^3
  • Mobility:                       3500-3600 cm^2/V.S
  • Resistivity:                    (2.9-10.7) E-3 ohm-cm
  • EPD:                            <8000/cm^2
  • Note:                            EPI polishing: RMS < 5 Angstrom


Related Products

Other GaAs


 InSb

 Other InAs

 		 InP 


 GaSb

 Wafer Box

 Film Coater

 RTP Furnaces
GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.485mm, 1sp, Prime Grade - GATea50D0485C1deg2US | MTI Online Store