
1200°C Max. Swingable Dual Heating-zone High Pressure Furnace -10 MPa for GaN Crystal Growth - CM-HIP-2-II
1200°C Max. Swingable Dual Heating-zone High Pressure Furnace -10 MPa for GaN Crystal Growth - CM-HIP-2-II
CM-HIP-2-II is a swingable dual heating-zone, high-pressure furnace up to 10 MPa @ 1200°C. It is designed especially for crystal growth, such as flux method, ammonia-thermal method, or LPE for GaN or YIG. It can also be used as a conventional Hot Isostatic Pressing (HIP) furnace.Â
Specifications
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Original: $159,998.00
-65%$159,998.00
$55,999.30More Images



1200°C Max. Swingable Dual Heating-zone High Pressure Furnace -10 MPa for GaN Crystal Growth - CM-HIP-2-II
CM-HIP-2-II is a swingable dual heating-zone, high-pressure furnace up to 10 MPa @ 1200°C. It is designed especially for crystal growth, such as flux method, ammonia-thermal method, or LPE for GaN or YIG. It can also be used as a conventional Hot Isostatic Pressing (HIP) furnace.Â
Specifications
Â
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
CM-HIP-2-II is a swingable dual heating-zone, high-pressure furnace up to 10 MPa @ 1200°C. It is designed especially for crystal growth, such as flux method, ammonia-thermal method, or LPE for GaN or YIG. It can also be used as a conventional Hot Isostatic Pressing (HIP) furnace.Â
Specifications
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