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VGF-Ge Wafer(100) . 50 mmdia x 0.175 mm, 1SP, P type ( Ga doped) R:0.008-0.021 Ohm.cm
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VGF-Ge Wafer(100) . 50 mmdia x 0.175 mm, 1SP, P type ( Ga doped) R:0.008-0.021 Ohm.cm

VGF-Ge Wafer(100) . 50 mmdia x 0.175 mm, 1SP, P type ( Ga doped) R:0.008-0.021 Ohm.cm

Ge Wafer Specification

  • Growing Method:              VGF
  • Orientation:                      (100) +/-0.5 Deg.
  • Wafer Size:                      50(+/_0.3) mm  dia x  175(+/_15) microns  
  • Surface Polishing:             One side  polished
  • Surface roughness:            RMS or Ra:~ 10 A(By AFM)
  • Doping:                            Ga Doped
  • Conductor type:                P-type
  • Resistivity:                       0.008-0.02 Ohm.cm (If you would like to measure the resistivity accurately, 
                                          please order our     Portable 4 Probe Resistivity Testing Instrument.)
  • Carrier Concentration:       N/A
  • Mobility:                           N/A
  • EPD:                                     <=500 /cm^2
  • Ra(Average Roughness) :  < 0.4 nm
  • Package:                         under 1000 class clean room      

Typical Properties:

  • Structure:                        Cubic, a = 5.6754Å
  •  Density:                          5.323 g/cm3 at room temperature
  • Melting Point:                  937.4 oC
  • Thermal Conductivity:       640


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$418.25

Original: $1,195.00

-65%
VGF-Ge Wafer(100) . 50 mmdia x 0.175 mm, 1SP, P type ( Ga doped) R:0.008-0.021 Ohm.cm—

$1,195.00

$418.25

VGF-Ge Wafer(100) . 50 mmdia x 0.175 mm, 1SP, P type ( Ga doped) R:0.008-0.021 Ohm.cm

Ge Wafer Specification

  • Growing Method:              VGF
  • Orientation:                      (100) +/-0.5 Deg.
  • Wafer Size:                      50(+/_0.3) mm  dia x  175(+/_15) microns  
  • Surface Polishing:             One side  polished
  • Surface roughness:            RMS or Ra:~ 10 A(By AFM)
  • Doping:                            Ga Doped
  • Conductor type:                P-type
  • Resistivity:                       0.008-0.02 Ohm.cm (If you would like to measure the resistivity accurately, 
                                          please order our     Portable 4 Probe Resistivity Testing Instrument.)
  • Carrier Concentration:       N/A
  • Mobility:                           N/A
  • EPD:                                     <=500 /cm^2
  • Ra(Average Roughness) :  < 0.4 nm
  • Package:                         under 1000 class clean room      

Typical Properties:

  • Structure:                        Cubic, a = 5.6754Å
  •  Density:                          5.323 g/cm3 at room temperature
  • Melting Point:                  937.4 oC
  • Thermal Conductivity:       640


Related Product

Other Crystal wafer A-Z

Plasma Cleaner

 Wafer Containers

Dicing saw

Film Coater

Product Information

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Description

Ge Wafer Specification

  • Growing Method:              VGF
  • Orientation:                      (100) +/-0.5 Deg.
  • Wafer Size:                      50(+/_0.3) mm  dia x  175(+/_15) microns  
  • Surface Polishing:             One side  polished
  • Surface roughness:            RMS or Ra:~ 10 A(By AFM)
  • Doping:                            Ga Doped
  • Conductor type:                P-type
  • Resistivity:                       0.008-0.02 Ohm.cm (If you would like to measure the resistivity accurately, 
                                          please order our     Portable 4 Probe Resistivity Testing Instrument.)
  • Carrier Concentration:       N/A
  • Mobility:                           N/A
  • EPD:                                     <=500 /cm^2
  • Ra(Average Roughness) :  < 0.4 nm
  • Package:                         under 1000 class clean room      

Typical Properties:

  • Structure:                        Cubic, a = 5.6754Å
  •  Density:                          5.323 g/cm3 at room temperature
  • Melting Point:                  937.4 oC
  • Thermal Conductivity:       640


Related Product

Other Crystal wafer A-Z

Plasma Cleaner

 Wafer Containers

Dicing saw

Film Coater

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