Ge Wafer (100) +/- 2.5 Degree Undoped, 2" dia x 0.5 mm, 1SP, Resistivities: >50 ohm-cm

Ge Wafer Specification

• Growing Method:                CZ
• Orientation:                        (100) +/-2.5 Deg.
• Wafer Size:                        2" dia x  500 microns  
• Surface Polishing:              one side epi polished
• Surface roughness:             RMS or Ra: ~ 10 A ( by AFM)
• Doping:                              Undoped
• Conductor type:                  N-type
• Resistivity:                          >50 Ohms/cm (If you would like to measure the resistivity accurately, 
                                           please order our Portable 4 Probe Resistivity Testing Instrument.)                    
• Package:                           under 1000 class clean room      

Typical Properties:

• Structure:                         Cubic, a = 5.6754 A
• Density:                            5.323 g/cm3 at room temperature
• Melting Point:                    937.4 ^oC
• Thermal Conductivity:         640