Ge Wafer (100) +/-0.7 Degree 2" dia x 0.45 mm, 1SP, N type ( Sb doped), R:>40 ohm-cm

Ge Wafer Specification

• Growing Method:               CZ
• Orientation:                       (100) +/-0.7 Deg.
• Wafer Size:                       2" dia x  450 microns  
• Surface Polishing:             one side epi polished
• Surface roughness:           ~10 A ( by AFM)
• Doping:                            Sb Doped
• Conductor type:                N-type
• Resistivity:                       >40 ohm-cm  (If you would like to measure the resistivity accurately, 
                                         please order our Portable 4 Probe Resistivity Testing Instrument.)                
• Package:                         under 1000 class clean room      

Typical Properties:

• Structure:                        Cubic, a = 5.6754 Å
• Density:                          5.323 g/cm3 at room temperature
• Melting Point:                  937.4 ^oC
• Thermal Conductivity:       640