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Ge Wafer Undoped (110) 3" dia x 0.5 mm 1 side polished resistivity: >50 ohm-cm
Ge Wafer Specification
- Growing Method: CZ
- Orientation: (110) +/_0.5 Deg.
- Wafer Size: 3" dia x 0.5 mm
- Surface Polishing: one side optical polished
- Surface finish (RMS or Ra) : < 30A
- Doping: Undoped
- Conductor type: N-type
- Resistivity: >50 Ohms/cm (If you would like to measure the resistivity accurately,
please order our Portable 4 Probe Resistivity Testing Instrument.) - Package: under 1000 class clean room in wafer containerRelated Product
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$269.15
Original: $769.00
-65%Ge Wafer Undoped (110) 3" dia x 0.5 mm 1 side polished resistivity: >50 ohm-cm—
$769.00
$269.15Ge Wafer Undoped (110) 3" dia x 0.5 mm 1 side polished resistivity: >50 ohm-cm
Ge Wafer Specification
- Growing Method: CZ
- Orientation: (110) +/_0.5 Deg.
- Wafer Size: 3" dia x 0.5 mm
- Surface Polishing: one side optical polished
- Surface finish (RMS or Ra) : < 30A
- Doping: Undoped
- Conductor type: N-type
- Resistivity: >50 Ohms/cm (If you would like to measure the resistivity accurately,
please order our Portable 4 Probe Resistivity Testing Instrument.) - Package: under 1000 class clean room in wafer containerRelated Product
Other Crystal wafer A-Z
Plasma Cleaner
Wafer Containers
Dicing saw
Film Coater
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Product Information
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Shipping & Returns
Description
Ge Wafer Specification
- Growing Method: CZ
- Orientation: (110) +/_0.5 Deg.
- Wafer Size: 3" dia x 0.5 mm
- Surface Polishing: one side optical polished
- Surface finish (RMS or Ra) : < 30A
- Doping: Undoped
- Conductor type: N-type
- Resistivity: >50 Ohms/cm (If you would like to measure the resistivity accurately,
please order our Portable 4 Probe Resistivity Testing Instrument.) - Package: under 1000 class clean room in wafer containerRelated Product
Other Crystal wafer A-Z
Plasma Cleaner
Wafer Containers
Dicing saw
Film Coater
