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VGF-Ge Wafer(100) 100mm dia x 0.5 mm, 2SP, P type ( Ga doped) R:0.128-0.303 Ohm.cm
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VGF-Ge Wafer(100) 100mm dia x 0.5 mm, 2SP, P type ( Ga doped) R:0.128-0.303 Ohm.cm

VGF-Ge Wafer(100) 100mm dia x 0.5 mm, 2SP, P type ( Ga doped) R:0.128-0.303 Ohm.cm

Ge Wafer Specification

  • Growing Method:               VGF
  • Orientation:                      (100) +/-0.4 Deg.
  • Wafer Size:                      100mm  dia x 500 microns  
  • Surface Polishing:              Two sides polished
  • Surface roughness:            < 8 A ( by AFM)
  • Doping:                            Ga Doped
  • Conductor type:                 P-type
  • Resistivity:                       0.128-0.303Ohm.cm (If you would like to measure the resistivity accurately, 
                                         please order our     Portable 4 Probe Resistivity Testing Instrument.)
  • Carrier Concentration:        (1.07-2.89) x10^16 /c.c
  • Mobility:                          1690-2070 cm^2/Vs
  • EPD:                               <500 /cm
  • Ra(Average Roughness) :   < 0.4 nm  
  • Package:                         under 1000 class clean room

Typical Properties:

  • Structure:                        Cubic, a = 5.6754Å
  •  Density:                          5.323 g/cm3 at room temperature
  • Melting Point:                    937.4 oC
  • Thermal Conductivity:         640

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$1,795.00
VGF-Ge Wafer(100) 100mm dia x 0.5 mm, 2SP, P type ( Ga doped) R:0.128-0.303 Ohm.cm—
$1,795.00

VGF-Ge Wafer(100) 100mm dia x 0.5 mm, 2SP, P type ( Ga doped) R:0.128-0.303 Ohm.cm

Ge Wafer Specification

  • Growing Method:               VGF
  • Orientation:                      (100) +/-0.4 Deg.
  • Wafer Size:                      100mm  dia x 500 microns  
  • Surface Polishing:              Two sides polished
  • Surface roughness:            < 8 A ( by AFM)
  • Doping:                            Ga Doped
  • Conductor type:                 P-type
  • Resistivity:                       0.128-0.303Ohm.cm (If you would like to measure the resistivity accurately, 
                                         please order our     Portable 4 Probe Resistivity Testing Instrument.)
  • Carrier Concentration:        (1.07-2.89) x10^16 /c.c
  • Mobility:                          1690-2070 cm^2/Vs
  • EPD:                               <500 /cm
  • Ra(Average Roughness) :   < 0.4 nm  
  • Package:                         under 1000 class clean room

Typical Properties:

  • Structure:                        Cubic, a = 5.6754Å
  •  Density:                          5.323 g/cm3 at room temperature
  • Melting Point:                    937.4 oC
  • Thermal Conductivity:         640

Related Product

Other Crystal wafer A-Z

Plasma Cleaner

 Wafer Containers

Dicing saw

Film Coater

Product Information

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Description

Ge Wafer Specification

  • Growing Method:               VGF
  • Orientation:                      (100) +/-0.4 Deg.
  • Wafer Size:                      100mm  dia x 500 microns  
  • Surface Polishing:              Two sides polished
  • Surface roughness:            < 8 A ( by AFM)
  • Doping:                            Ga Doped
  • Conductor type:                 P-type
  • Resistivity:                       0.128-0.303Ohm.cm (If you would like to measure the resistivity accurately, 
                                         please order our     Portable 4 Probe Resistivity Testing Instrument.)
  • Carrier Concentration:        (1.07-2.89) x10^16 /c.c
  • Mobility:                          1690-2070 cm^2/Vs
  • EPD:                               <500 /cm
  • Ra(Average Roughness) :   < 0.4 nm  
  • Package:                         under 1000 class clean room

Typical Properties:

  • Structure:                        Cubic, a = 5.6754Å
  •  Density:                          5.323 g/cm3 at room temperature
  • Melting Point:                    937.4 oC
  • Thermal Conductivity:         640

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