VGF-Ge Wafer(100) . 100 mmdia x 0.175 mm, 1SP, P type ( Ga doped)

Ge Wafer Specification

• Growing Method:                VGF
• Orientation:                        (100) +/-0.5 Deg.
• Wafer Size:                       100(+/-0.4) mm  dia x  175(+/-25) microns  
  
• Surface Polishing:              One side  polished
• Surface roughness:             < 8 A
• Doping:                             Ga Doped
• Conductor type:                 P-type
• Resistivity:                        (0.182-0.327) Ohm.cm (If you would like to measure the resistivity accurately, 
                                         please order our Portable 4 Probe Resistivity Testing Instrument.)
• Carrier Concentration:        (0.92-4.13) E16 /c.c
• Mobility:                           (1520-2090) cm^2/v.s
• EPD:                                <=500 /cm^2
• Package:                          under 1000 class clean room      

Typical Properties:

• Structure:                         Cubic, a = 5.6754Å
•  Density:                           5.323 g/cm3 at room temperature
• Melting Point:                    937.4 ^oC
• Thermal Conductivity:         640