VGF-Ge Wafer (100) 100mm dia x 0.5 mm, 1SP, N type ( As- doped), R: 0.088- 0.25ohm.cm

Ge Wafer Specification

• Growing Method:               VGF
• Orientation:                       (100) +/-0.5 Deg.
• Wafer Size:                       100mm dia x  500 microns  
• Surface Polishing:              One side epi polished
• Surface roughness:            RMS or Ra:~ 10 A(By AFM) 
• Conductor type:                  N-type
• Dopant:                             As-Doped
• Resistivity:                         0.088-0.25ohm.cm (If you would like to measure the resistivity accurately, 
                                            please order our Portable 4 Probe Resistivity Testing Instrument.)
• Carrier concentration:         (0.78-3.02)x10^16/c.c
• Mobility:                            2350-3010 cm^2.v.s
• EPD:                                 < 500 /cm^2
• Ra(Average Roughness) :   < 0.4 nm                      
• Package:                           under 1000 class clean room     
  

Typical Properties:

• Structure:                         Cubic, a = 5.6754Å
• Density:                            5.323 g/cm3 at room temperature
• Melting Point:                    937.4 ^oC
• Thermal Conductivity:        640