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Ge Wafer Undoped (100) 3" dia x 0.5 mm 1 side polished resistivity: >50 ohm-cm - GEUa76D05C1R50US
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Ge Wafer Undoped (100) 3" dia x 0.5 mm 1 side polished resistivity: >50 ohm-cm - GEUa76D05C1R50US

Ge Wafer Undoped (100) 3" dia x 0.5 mm 1 side polished resistivity: >50 ohm-cm - GEUa76D05C1R50US

Ge Wafer Specification

  • Growing Method:             CZ
  • Orientation:                    (100) +/-0.5 Deg.
  • Wafer Size:                    3" dia x  0.5 mm 
  • Surface Polishing:          one side optical polished
  • Surface finish (RMS or Ra) :  < 30A
  • Doping:                           Undoped
  • Conductor type:             N-type
  • Resistivity:                   >50 Ohms/cm (If you would like to measure the resistivity accurately, 
                                      please order our     Portable 4 Probe Resistivity Testing Instrument.)                      
  • Package:                       under 1000 class clean room  in wafer container     
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$269.15

Original: $769.00

-65%
Ge Wafer Undoped (100) 3" dia x 0.5 mm 1 side polished resistivity: >50 ohm-cm - GEUa76D05C1R50US—

$769.00

$269.15

Ge Wafer Undoped (100) 3" dia x 0.5 mm 1 side polished resistivity: >50 ohm-cm - GEUa76D05C1R50US

Ge Wafer Specification

  • Growing Method:             CZ
  • Orientation:                    (100) +/-0.5 Deg.
  • Wafer Size:                    3" dia x  0.5 mm 
  • Surface Polishing:          one side optical polished
  • Surface finish (RMS or Ra) :  < 30A
  • Doping:                           Undoped
  • Conductor type:             N-type
  • Resistivity:                   >50 Ohms/cm (If you would like to measure the resistivity accurately, 
                                      please order our     Portable 4 Probe Resistivity Testing Instrument.)                      
  • Package:                       under 1000 class clean room  in wafer container     
    Related Product

    Other Crystal wafer A-Z

    Plasma Cleaner

     Wafer Containers

    Dicing saw

    Film Coater

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Description

Ge Wafer Specification

  • Growing Method:             CZ
  • Orientation:                    (100) +/-0.5 Deg.
  • Wafer Size:                    3" dia x  0.5 mm 
  • Surface Polishing:          one side optical polished
  • Surface finish (RMS or Ra) :  < 30A
  • Doping:                           Undoped
  • Conductor type:             N-type
  • Resistivity:                   >50 Ohms/cm (If you would like to measure the resistivity accurately, 
                                      please order our     Portable 4 Probe Resistivity Testing Instrument.)                      
  • Package:                       under 1000 class clean room  in wafer container     
    Related Product

    Other Crystal wafer A-Z

    Plasma Cleaner

     Wafer Containers

    Dicing saw

    Film Coater
Ge Wafer Undoped (100) 3" dia x 0.5 mm 1 side polished resistivity: >50 ohm-cm - GEUa76D05C1R50US | MTI Online Store