Ge Wafer (111) 4" dia x 0.5 mm, 2SP, N type ( Sb- doped)with resistivities: 0.014-0.022 Ohms-cm

Ge Wafer Specification

• Growing Method:              CZ
• Orientation:                      (111) +/-0.5 Deg.
• Wafer Size:                      4" dia x  500 microns  
• Surface Polishing:             Two  sides  epi polished
• Surface roughness:           < 30 A ( by AFM)
• Doping:                            Sb- Doped
• Conductor type:                N-type
• Resistivity:                       0.014-0.022 Ohm/cm (If you would like to measure the resistivity accurately, 
                                        please order our Portable 4 Probe Resistivity Testing Instrument.)                         
• Package:                         under 1000 class clean room       

Typical Properties:

• Structure:                        Cubic, a = 5.6754Å
• Density:                           5.323 g/cm3 at room temperature
• Melting Point:                   937.4 ^oC
• Thermal Conductivity:        640