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Ge Wafer (111) 2" dia x 0..5 mm, 2SP, N type ( Sb doped), R: 0.05-0.5 ohm-cm
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Ge Wafer (111) 2" dia x 0..5 mm, 2SP, N type ( Sb doped), R: 0.05-0.5 ohm-cm

Ge Wafer (111) 2" dia x 0..5 mm, 2SP, N type ( Sb doped), R: 0.05-0.5 ohm-cm

Ge Wafer Specification

  • Growing Method:               CZ
  • Orientation:                       (111) +/_0.5 Deg.
  • Wafer Size:                       2" dia x 500 microns  
  • Surface Polishing:             Two sides epi polished
  • Surface roughness:           < 8 A ( by AFM)
  • Doping:                            Sb Doped
  • Conductor type:                N-type
  • Resistivity:                       0.05-0.5  Ohms/cm (If you would like to measure the resistivity accurately, 
                                           please order our     Portable 4 Probe Resistivity Testing Instrument.)
  • EPD:                              
  • Package:                         under 1000 class clean room      
  •      

Typical Properties:

  • Structure:                        Cubic, a = 5.6754 A
  • Density:                          5.323 g/cm3 at room temperature
  • Melting Point:                  937.4 oC
  • Thermal Conductivity:       640

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$659.00
Ge Wafer (111) 2" dia x 0..5 mm, 2SP, N type ( Sb doped), R: 0.05-0.5 ohm-cm—
$659.00

Ge Wafer (111) 2" dia x 0..5 mm, 2SP, N type ( Sb doped), R: 0.05-0.5 ohm-cm

Ge Wafer Specification

  • Growing Method:               CZ
  • Orientation:                       (111) +/_0.5 Deg.
  • Wafer Size:                       2" dia x 500 microns  
  • Surface Polishing:             Two sides epi polished
  • Surface roughness:           < 8 A ( by AFM)
  • Doping:                            Sb Doped
  • Conductor type:                N-type
  • Resistivity:                       0.05-0.5  Ohms/cm (If you would like to measure the resistivity accurately, 
                                           please order our     Portable 4 Probe Resistivity Testing Instrument.)
  • EPD:                              
  • Package:                         under 1000 class clean room      
  •      

Typical Properties:

  • Structure:                        Cubic, a = 5.6754 A
  • Density:                          5.323 g/cm3 at room temperature
  • Melting Point:                  937.4 oC
  • Thermal Conductivity:       640

Related Product

Other Crystal wafer A-Z

Plasma Cleaner

 Wafer Containers

Dicing saw

Film Coater

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Description

Ge Wafer Specification

  • Growing Method:               CZ
  • Orientation:                       (111) +/_0.5 Deg.
  • Wafer Size:                       2" dia x 500 microns  
  • Surface Polishing:             Two sides epi polished
  • Surface roughness:           < 8 A ( by AFM)
  • Doping:                            Sb Doped
  • Conductor type:                N-type
  • Resistivity:                       0.05-0.5  Ohms/cm (If you would like to measure the resistivity accurately, 
                                           please order our     Portable 4 Probe Resistivity Testing Instrument.)
  • EPD:                              
  • Package:                         under 1000 class clean room      
  •      

Typical Properties:

  • Structure:                        Cubic, a = 5.6754 A
  • Density:                          5.323 g/cm3 at room temperature
  • Melting Point:                  937.4 oC
  • Thermal Conductivity:       640

Related Product

Other Crystal wafer A-Z

Plasma Cleaner

 Wafer Containers

Dicing saw

Film Coater

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