Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 1SP Resistivity: 0.1-1.0 ohm.cm - GESbe50D05C1R01US

Ge Wafer Specification

• Growing Method:                   CZ
• Orientation:                           (110) +/_0.5 Deg
• Wafer Size:                           2" dia x  500 microns  
• Surface finish (RMS or Ra) :   One side optical polished < 30A
  
• Doping:                                 Sb doped
• Conductor type:                     N-type
• Resistivity:                            0.1-0.5 ohm.cm (If you would like to measure the resistivity accurately, 
                                             please order our Portable 4 Probe Resistivity Testing Instrument.)                           
• Package:                              under 1000 class clean room     
   

Typical Properties:

• Structure:                             Cubic, a = 5.6754 A
• Density:                               5.323 g/cm3 at room temperature
• Melting Point:                       937.4 ^oC
• Thermal Conductivity:            640