Ge Wafer (110) N-type Undoped, 2" dia x 0.5 mm, 1SP, R:>50 ohm.cm

Ge Wafer Specification

• Growing Method:                    CZ
• Orientation:                            (110) +/_0.5 Deg.
• Wafer Size:                            2" dia x  500 microns  
• Surface Polishing:                  one side optical polished
• Surface finish (RMS or Ra) :    < 30A
• Doping:                                 Undoped
• Conductor type:                     N-type
• Resistivity:                             > 50Ohms/cm (If you would like to measure the resistivity accurately, 
                                             please order our Portable 4 Probe Resistivity Testing Instrument.)
• EPD:                                     < 5E2 /cm^2
• Package:                              under 1000 class clean room      

Typical Properties:

• Structure:                            Cubic, a = 5.6754 A
• Density:                               5.323 g/cm3 at room temperature
• Melting Point:                       937.4 ^oC
• Thermal Conductivity:           640