Ge Wafer (110) N-type Undoped, 1" dia x 0.5 mm , 1SP,R:>50 ohm.cm

Ge Wafer Specification

• Growing Method:              CZ
• Orientation:                    (110) +/_0.5 Deg.
• Wafer Size:                      1" dia x  500 microns  
• Surface Polishing:           one side  polished
• Surface roughness:        Ra < 10 A ( by AFM)
• Doping:                          Undoped
• Conductor type:              N-type
• Resistivity:                     >50 Ohms/cm  (If you would like to measure the resistivity accurately, 
                                      please order our Portable 4 Probe Resistivity Testing Instrument.)                      
• Package:                         under 1000 class clean room      

Typical Properties:

• Structure:                       Cubic, a = 5.6754 A
• Density:                           5.323 g/cm3 at room temperature
• Melting Point:                  937.4 ^oC
• Thermal Conductivity:     640