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Ge Wafer (100)N-type Undoped, 1" dia x 0.5 mm , 2SP,R:>50 ohm.cm - GEUa25D05C2R50

Ge Wafer (100)N-type Undoped, 1" dia x 0.5 mm , 2SP,R:>50 ohm.cm - GEUa25D05C2R50

Ge Wafer (100)N-type Undoped, 1" dia x 0.5 mm , 2SP,R:>50 ohm.cm - GEUa25D05C2R50

Ge Wafer Specification

Growing Method: CZ
Orientation: (100) +/_0.5 Deg.
Wafer Size: 1" dia x 500 microns
Surface Polishing: two side epi polished
Surface roughness: RMS or Ra:~ 10 A(By AFM)
Doping: Undoped
Conductor type: N-type
Resistivity: >50 Ohms/cm (If you would like to measure the resistivity accurately,
please order our Portable 4 Probe Resistivity Testing Instrument.)
Package: under 1000 class clean room

Typical Properties:

Structure: Cubic, a = 5.6754 A
Density: 5.323 g/cm3 at room temperature
Melting Point: 937.4 ^oC
Thermal Conductivity: 640

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$289.00

Ge Wafer (100)N-type Undoped, 1" dia x 0.5 mm , 2SP,R:>50 ohm.cm - GEUa25D05C2R50—

$289.00

Ge Wafer (100)N-type Undoped, 1" dia x 0.5 mm , 2SP,R:>50 ohm.cm - GEUa25D05C2R50

Ge Wafer Specification

Growing Method: CZ
Orientation: (100) +/_0.5 Deg.
Wafer Size: 1" dia x 500 microns
Surface Polishing: two side epi polished
Surface roughness: RMS or Ra:~ 10 A(By AFM)
Doping: Undoped
Conductor type: N-type
Resistivity: >50 Ohms/cm (If you would like to measure the resistivity accurately,
please order our Portable 4 Probe Resistivity Testing Instrument.)
Package: under 1000 class clean room

Typical Properties:

Structure: Cubic, a = 5.6754 A
Density: 5.323 g/cm3 at room temperature
Melting Point: 937.4 ^oC
Thermal Conductivity: 640

Related Product


Other Crystal wafer A-Z	Plasma Cleaner	Wafer Containers	Dicing saw	Film Coater

Product Information

Shipping & Returns

Description

Ge Wafer Specification

Growing Method: CZ
Orientation: (100) +/_0.5 Deg.
Wafer Size: 1" dia x 500 microns
Surface Polishing: two side epi polished
Surface roughness: RMS or Ra:~ 10 A(By AFM)
Doping: Undoped
Conductor type: N-type
Resistivity: >50 Ohms/cm (If you would like to measure the resistivity accurately,
please order our Portable 4 Probe Resistivity Testing Instrument.)
Package: under 1000 class clean room

Typical Properties:

Structure: Cubic, a = 5.6754 A
Density: 5.323 g/cm3 at room temperature
Melting Point: 937.4 ^oC
Thermal Conductivity: 640

Related Product


Other Crystal wafer A-Z	Plasma Cleaner	Wafer Containers	Dicing saw	Film Coater

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