Ge Wafer (100) with flat (100) 4" dia x 0.5 mm, 1SP, N type (Sb doped) Resistivities: 0.1-0.5 ohm-cm - GESba100D05C1R01US

Ge Wafer Specification

• Growing Method:               CZ
• Orientation:                       (100) +/-0.5 Deg.
  Flat:                                   <100>
• Wafer Size:                       4" dia x  500 microns  
• Surface Polishing:             One side epi polished
• Surface roughness:           RMS or Ra:~ 10 A(By AFM)
• Doping:                            Sb Doped
• Conductor type:                N-type
• Resistivity:                       0.1-0.5   Ohms/cm       
• Package:                         under 1000 class clean room      

Typical Properties:

• Structure:                        Cubic, a = 5.6754Å
• Density:                           5.323 g/cm3 at room temperature
• Melting Point:                   937.4 ^oC
• Thermal Conductivity:        640