Ge Wafer (100) Undoped, 2" dia x 0.5 mm, resistivities: >50 ohm-cm, 2SP - GEUa50D05C2R50US

Ge Wafer Specification

• Growing Method:               CZ
• Orientation:                       (100) +/_0.5 Deg.
• Wafer Size:                      2" dia x  500 microns  
• Surface Polishing:             Two sides epi polished
• Surface roughness:           RMS or Ra:~ 10 A( by AFM)
• Doping:                            Undoped
• Conductor type:                N-type
• Resistivity:                        >50 Ohms/cm (If you would like to measure the resistivity accurately, 
                                        please order our Portable 4 Probe Resistivity Testing Instrument.)                    
• Package:                         under 1000 class clean room      

Typical Properties:

• Structure:                         Cubic, a = 5.6754 A
• Density:                           5.323 g/cm3 at room temperature
• Melting Point:                   937.4 ^oC
• Thermal Conductivity:        640